Carrier leakage into the continuum in diagonal GaAs/Al0.15GaAs terahertz quantum cascade lasers

Design Optimization for 4.1-THZ Quantum Cascade Lasers

We present an optimized design for GaAs/AlGaAs quantum cascade lasers operating at ‎‎4.1THz. This was based on a three-well active module with diagonal radiative transition. This ‎was performed by modifying the existing model structure, to reduce the parasitic anticrossings ‎‎(leakage currents) as well as the optical gain linewidth. While the gain FWHM was reduced by ‎more than 50% the gain pea...

Two-well terahertz quantum cascade lasers with suppressed carrier leakage

Energy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes

In this paper, we have studied the strain, band-edge, and energy levels of cubic InGaAs quantum dots (QDs) surrounded by GaAs. It is shown that overall strain value is larger in InGaAs-GaAs interfaces, as well as in smaller QDs. Also, it is proved that conduction and valence band-edges and electron-hole levels are size dependent; larger QD sizes appeared to result in the lower recombination...

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most pow...

Tall-barrier terahertz quantum cascade lasers

A terahertz quantum cascade laser is presented in which selectively placed pure AlAs barriers are used to reduce parasitic leakage currents to the conduction band continuum. The design is demonstrated to have improved temperature performance over a regrowth of the current Tmax 200 K record holder (181 K vs. 175 K). Strangely, it fails to lase below 70 K, which we attribute to negative different...